NP82N055NUG-S18-AY【PDF 9/10 页】MOSFET N-CH 55V 82A TO-262

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NP82N055MUG, NP82N055NUG

MARKING INFORMATION

NEC

82N055

UG

Pb-free plating marking

Abbreviation of part number

Lot code

RECOMMENDED SOLDERING CONDITIONS

These products should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, please contact an NEC Electronics

sales representative.

For technical information, see the following website.

Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)

Soldering Method

Wave soldering

NP82N055MUG,

NP82N055NUG

Partial heating

NP82N055MUG,

NP82N055NUG

Soldering Conditions

Maximum temperature (Solder temperature): 260 ° C or below

Time: 10 seconds or less

Maximum chlorine content of rosin flux: 0.2% (wt.) or less

Maximum temperature (Pin temperature): 350 ° C or below

Time (per side of the device): 3 seconds or less

Maximum chlorine content of rosin flux: 0.2% (wt.) or less

Recommended

Condition Symbol

THDWS

P350

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet D19804EJ1V0DS

7

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相关代理商/技术参数

NP82N055PUG-E1-AY 功能描述:MOSFET N-CH 55V 82A TO-263 RoHS:是类别:分离式半导体产品 >> FET - 单系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

NP82N055PUG-E1-AY/JM 制造商:Renesas Electronics Corporation 功能描述:

NP82N055PUG-E2-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/82A

NP82N06MLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR

NP82N06MLG-S18-AY 功能描述:MOSFET N-CH TO-220 RoHS:是类别:分离式半导体产品 >> FET - 单系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

NP82N06NLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR

NP82N06NLG-S18-AY 功能描述:MOSFET N-CH 60V 82A TO-262 RoHS:是类别:分离式半导体产品 >> FET - 单系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

NP82N06PDG-E1-AY 功能描述:MOSFET N-CH 60V 82A TO-263 RoHS:是类别:分离式半导体产品 >> FET - 单系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件